1.2 kV Trench Insulated Gate Bipolar Transistors (IGBT's) with ultralow on-resistance

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 428-430

  Udrea, F ^a   Chan, S S M ^b   Thomson, J ^b   Trajkovic, T ^a   Waind, P R ^b   Amaratunga, G A J ^a   Crees, D E ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Mitel Semiconductor   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MANUFACTURE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NONIRRADIATED DEVICES; ULTRALOW ON-RESISTANCE;

BIPOLAR TRANSISTORS;

EID: 0032687577     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778166     Document Type: Article

References (12)

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