Novel high-conductivity IGBT (HiGT) with a short circuit capability

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 429-432

  Mori, M ^a   Uchino, Y ^a   Sakano, J ^a   Kobayashi, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT COLLECTORS; MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SHORT CIRCUIT CURRENTS;

DOUBLE DIFFUSE METAL OXIDE SEMICONDUCTOR (DMOS) STRUCTURE; HIGH CONDUCTIVITY INSULATED GATE BIPOLAR TRANSISTORS (HIGT); HOLE BARRIER LAYERS;

BIPOLAR TRANSISTORS;

EID: 0031622354     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)