High voltage IGBT(HV-IGBT) having p+/p- collector region

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 249-252

  Suekawa, E ^a   Tomomatsu, Y ^a   Enjoji, T ^a   Kondoh, H ^a   Takeda, M ^a   Yamada, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT COLLECTORS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS;

COLLECTOR-EMITTER SATURATION VOLTAGE; INSULATED GATED BIPOLAR TRANSISTOR (IGBT); REVERSE BIAS SAFETY OPERATING AREA (RBSOA); TURN-OFF SWITCHING LOSS;

BIPOLAR TRANSISTORS;

EID: 0031633225     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)