Design evaluation of injection enhancement gate transistor based on device simulation

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 265-268

  Yahata, Akihiro ^a   Eicher, Simon ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC LOSSES; ELECTRIC POTENTIAL; MOS DEVICES;

INJECTION ENHANCEMENT GATE TRANSISTORS (IEGT);

GATES (TRANSISTOR);

EID: 0031640571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)