Unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 190-195

  Udrea, Florin ^a   Amaratunga, Gehan A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GATES (TRANSISTOR); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CARRIER MODULATION; ON STATE CARRIER DYNAMICS; TRENCH INSULATED GATE BIPOLAR TRANSISTOR (TIGBT);

BIPOLAR TRANSISTORS;

EID: 0029203286     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)