True blue inorganic optoelectronic devices

Advanced Materials

Volumn 12, Issue 13, 2000, Pages 935-946

  Gaul, David A ^a   Rees Jr , William S ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; MOLECULES; PHASE COMPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; STABILITY; STRUCTURE (COMPOSITION);

BLUE EMITTING DIODES; DOPANT; GALLIUM NITRIDE; ZINC SELENIDE;

LIGHT EMITTING DIODES;

EID: 0034229492     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4095(200006)12:13<935::AID-ADMA935>3.0.CO;2-J     Document Type: Article

References (160)

1. G. Fasol, Science 1996, 272, 1751.
2. G. Zorpette, Sci. Am. 1997, Sept., 36.
3. T. Matsuoka, Adv. Mater. 1996, 8, 469.
4. S. Nakamura, MRS Bull. 1997, Feb., 29.
5. R. Gunshor, A. Nurmikko, MRS Bull. 1995, July, 15.
6. S. Itoh, S. Taniguchi, T. Hino, R. Imoto, K. Nakano, N. Nakayama, M. Ikeda, A. Ishibashi, Mater. Sci. Eng. 1997, B43, 55.
7. C. Kittel, Introduction to Solid State Physics, Wiley, New York 1996.
8. A. Jones, P. O'Brien, CVD of Compound Semiconductors, VCH, Weinheim 1997, Ch. 1.
9. M. Haase, J. Qiu, J. DePuydt, H. Cheng, Appl. Phys. Lett. 1991, 59, 1272.
10. N. Nakayama, S. Itoh, T. Ohata, K. Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda, Y. Mori, Electron. Lett. 1993, 29, 1488.
11. N. Nakayama, S. Itoh, H. Okuyama, M. Ozawa, T. Ohata, K. Nakano, M. Ikeda, A. Ishibashi, Y. Mori, Electron. Lett. 1993, 29, 2194.
12. D. Grillo, M. Ringle, G. Hua, J. Han, R. Gunshor, A. Nurmikko, J. Vac. Sci. Technol. A 1995, 13, 681.
13. S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, M. Ikeda. Electron. Lett. 1996, 32, 552.
14. E. Tournie, C. Morhain, C. Ongaretto, V. Bousquet, P. Brunet, G. Neu, J. Faurie, R Triboulet, J. Ndap. Mater. Sci. Eng. 1997, B43, 21.
15. M. Bevan, H. Shih, H. Liu, A. Syllaios, W. Duncan, J. Cryst. Growth 1997, 170, 467.
16. T. Honda, S. Lim, K. Inoue, K. Hara, H. Munekata, H. Kukimoto, F. Koyama, K. Iga, J. Cryst. Growth 1997, 170, 503.
17. Y. Fan, J. Han, L. He, J. Saraie, L. Gunshor, G. Hua, N. Otsuka, Appl. Phys. Lett. 1992. 61, 3160.
18. H. Okuyama, K. Nakano, T. Miyajima, K. Akimoto, J. Cryst. Growth 1992, 117, 139.
19. W. Meredith, III-Vs Rev. 1996, 9, 56.
20. A. Waag, F. Fisher, H. Lugauer, T. Litz, T. Gerhard, J. Nurnberger, U Lunz, U. Zehnder, W. Ossau, G. Landwehr, B. Roos, H. Richter, Mater. Sci. Eng. 1997, B43, 65.
21. H. Lugauer, F. Fisher, T. Litz, A. Waag, U. Zehnder, W. Ossau, T. Gerhard, G. Landwehr, C. Becker, R. Kruse, J. Geurts, Mater. Sci. Eng. 1997, B43, 88.
22. W. S. Rees, Jr., in Encyclopedia of Inorganic Chemistry, Vol. I (Ed: R. B. King), Wiley, New York 1994, pp. 67-87.
23. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 1994, 64, 1687.
24. S. Nakamura, J. Vac. Sci. Technol. A 1995, 13, 705.
25. S. Nakamura, Nikkei Electron. 1994, 602, 93.
26. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 1994, 64, 1687.
27. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
28. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
29. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
30. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
31. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
32. See for example, the cover articles from the following: Adv. Mater. 1999, 11(16); Adv. Mater. 1998, 10(12); Adv. Mater. 1998, 10(1); Adv. Mater. 1997, 9(9); Adv. Mater. 1997, 9(1); Adv. Mater. 1995, 7(9).
33. I. Akaski, S. Sota, H. Sakai, T. Tanaka, M. Koike, H. Amano, Electron. Lett. 1996, 32, 1105.
34. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 1996, 35, L74.
35. S. Nakamura, III-Vs Rev. 1996, 9, 22.
36. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai, Appl. Phys. Lett. 2000, 76, 22.
37. X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi, T. Sugann, Jpn. J. Appl. Phys. 1994, 33, L649.
38. L. Hoffman, G. Ziegler, D. Theis, C. Weyrich, J. Appl. Phys. 1982, 53, 6962.
39. Y. Matsushita, T. Nakata, T. Uetani, T. Yamaguchi, T. Niina, Jpn. J. Appl. Phys. 1990, 29, L343.
40. K. Koga, T. Yamaguchi, Prog. Cryst. Growth Charact. 1991, 23, 127.
41. N. Yamada, Y. Kaneko, D. Mars, Compd. Semicond. 1996, 3, 41.
42. T. Yokogawa, S. Yoshii, A. Tsujimura, Y. Sasai, J. Merz, Jpn. J. Appl. Phys. 1995, 34, L751.
43. J. Zarrabi, P. Gavrilovic, S. Singh. Appl. Phys. Lett. 1995, 67, 2439.
44. N. Tessler, G. Denton, R. Friend, Nature 1996, 382, 695.
45. F. Hide, M. Diaz-Garcis, B. Schwartz, M. Andersson. Q. Pei. A. Heeger, Science, 1996, 273, 1833.
46. D. Moses, Appl. Phys. Lett. 1992, 60, 321.
47. See for example, the cover article from the following: Adv. Mater. 1996. 8(8).
48. E. Westerweele, P. Smith, A. Heeger, Adv. Mater. 1995, 7, 788.
49. K. Varth, K. Jensen, Adv. Mater. 1997, 9, 490.
50. S. Tasch, C. Brandstatter, F. Meghdadi, G. Leising, G. Froyer, L. Athouel, Adv. Mater. 1997, 9, 33.
51. T. Noda, H. Ogawa, N. Noma, Y. Shirota, Adv. Mater. 1997, 9, 720.
52. M. Berggren, O. Inganas, G. Gustafsson, J. Rasmusson, M. Anderson, T. Hjertberg, O. Wennerstrom, Nature 1994, 372, 444.
53. A. Fujii, M. Yoshida, Y. Ohmori, K. Yoshimo, J. Appl. Phys. 1995, 34, 499.
54. S. Tasch, A. Niko, G. Leising, U. Scherf, Appl. Phys. Lett. 1996, 68, 1090.
55. CVD of Non-Metals (Ed: W. S. Rees, Jr.), VCH, Weinheim 1996.
56. G. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, Academic, Boston, MA 1989.
57. M. Hitchman, K. Jensen, Chemical Vapor Deposition: Principles and Applications, Academic, London 1993.
58. M. Hampden-Smith, T. Kodas, Chem. Vap. Deposition 1995, 1, 8.
59. R. Moon, J. Cryst. Growth 1997, 170, 1.
60. F. Maury, Chem. Vap. Deposition 1996, 2, 113.
61. a) W. S. Rees, Jr., A. R. Barron, Adv. Mater. Opt. Electron. 1993, 2, 271.
62. b) W. S. Rees, Jr., A. R. Barron, Mater. Sci. Forum 1993, 137-139, 473.
63. H. Manasevit, W. Simpson, J. Electrochem. Soc. 1968, 118, 644.
64. A. Jones, P. O'Brien, CVD of Compound Semiconductors, VCH, Weinheim 1997, Ch. 4.
65. P. Wright, B. Cockayne, A. Williams, A. Jones, E. Orrell, J. Cryst. Growth 1987, 84, 552.
66. A. Jones, P. Wright, B. Cockayne, Chemtronics 1988, 3, 35.
67. H. Mitsuhashi, I. Mitsuishi, H. Kukimoto, Jpn. J. Appl. Phys. 1985, 24, 1864.
68. S. Srithoran, K. Jones, J. Cryst. Growth 1984, 66, 231.
69. K. Giapis, K. Jensen, J. Cryst. Growth 1990, 101, 111.
70. S. Patrick, K. Jensen, K. Giapis, J. Cryst. Growth 1991, 107, 390.
71. K. Jensen, ICMOVPE VI, Boston, MA 1992.
72. M. Heuken, in Materials Science Forum, (Eds: H. Heinrich, J. B. Müllen) Trans Tech, Linz, Austria 1995, 182-184, 389.
73. H. Katayama-Yoshida, T. Yamamoto, Phys. Status Solidi B 1997, 202, 763.
74. M. Aven, H. Woodbury, Appl. Phys. Lett. 1962, 1, 53.
75. W. Stutius, J. Cryst. Growth 1982, 59, 1.
76. W. Stutius, J. Appl. Phys. 1982, 53, 284.
77. K. Akimoto, T. Miyajima, Y. Mori, Jpn. J. Appl. Phys. 1989, 28, L531.
78. K. Akimoto, T. Miyajima, Y. Mori, J. Cryst. Growth 1990, 101, 1009.
79. T. Muranoi, S. Onizawa, M. Sasaki, J. Cryst. Growth 1994, 138, 255.
80. N. Shibata, A. Ohki, A. Katsui, J. Cryst. Growth 1988, 93, 703.
81. H. Stanzl, K. Wolf, B. Hahn, W. Gerbhardt, J. Cryst. Growth 1994, 145, 918.
82. A. Kamata, T. Uemoto, M. Okajima, K. Hirahara, M. Kawachi, T. Beppu, J. Cryst. Growth 1988, 86, 285.
83. T. Chu, S. Chu, G. Chen, J. Britt, C. Ferekides, C. Wu, J. Appl. Phys. 1992, 71, 3865.
84. H. Cheng, J. Depuydt, J. Potts, M. Haase. J. Cryst. Growth 1989, 95, 512.
85. K. Akimoto, T. Miyajima, Y. Mori, Phys. Rev. B 1989, 39, 3138.
86. C. Helms, Jpn. J. Appl. Phys. 1993, 32, 1558.
87. T. Yasuda, I. Mitsuishi, H. Kukimoto, Appl. Phys. Lett. 1988, 52, 57.
88. A. Yoshikawa, S. Muto, S. Yamaga, S. Kasi, Jpn. J. Appl. Phys. 1988, 27, L260.
89. B. Skromme, W. Liu, K. Jensen, K. Giapis, J. Cryst. Growth 1994, 138, 338.
90. A. Yahata, H. Mitsuhashi, K. Hirahara, T. Beppu, Jpn. J. Appl. Phys. 1990, 29, L4.
91. A. Yoshikawa, S. Muto, S. Yamaga, S. Kasi, J. Cryst. Growth 1983, 93, 697.
92. T. Yao, T. Taguchi, in Proc. 13th Int. Conf. on Defects in Semiconductors (Eds: L. C. Kimerling, J. M. Parsley). Metallurgical Society of AIME, Warrendale, PA 1984, p. 1221.
93. P. Dean, B. Fitzpatrick, R. Bhargava, Phys. Rev. B 1982, 26, 2016.
94. H. Wolf, A. Burchard, M. Deicher, T. Filz, A. Jost, S. Lauer, R. Magerle, V. Ostheimer, W. Pfeiffer, T. Wiehert, Mater. Sci. Forum 1995, 196-201, 309.
95. K. Akimoto, T. Miyajima, Y. Mori, Jpn. J. Appl. Phys. 1989, 28, L528.
96. S. Shibli, B. Tamargo, B. Skromme, S. Schwarz, C. Schwartz, R. Nahory, R. Martin, J. Vac. Sci. Technol. B 1990, 8, 187.
97. Y. Zhang, B. Skromme, S. Shibili, M. Tamargo, Phys. Rev. B 1993, 48, 10885.
98. Y. Zhang, W. Liu, B. Skromme, H. Cheng, S. Shibili, M. Tamargo, J. Cryst. Growth 1994, 138, 310.
99. R. Watts, W. Holton, M. de Witt, Phys. Rev. B 1971, 3, 404.
100. M. Okajima, M. Kawachi, T. Sato, K. Hirahara, A. Kamata, T. Beppu, in Extended Abstracts 18th Conf. on Solid State Devices and Materials, Tokyo, August 20-22 1986, p. 635.
101. Y. Kawakyu, M. Sasaki, T. Uemoto, T. Beppu, in Extended Abstracts 19th Conf. on Solid State Devices and Materials, Tokyo, August 25-27 1987, p. 259.
102. D. Chadi, N. Troullier, Physica B 1993, 185, 128.
103. H. Goto, T. Tanoi, M. Takemura, T. Ido, Jpn. J. Appl. Phys. 1995, 34, L827.
104. Z. Yu, S. Buczkowski, L. Hirsch, T. Meyers, J. Appl. Phys. 1996, 80, 6425.
105. J. Tararkiewicz, A. Breitschwerdt, A. Witowski, H. Hartmann, Solid State Commun. 1988, 68, 1081.
106. T. Yasuda, T. Yasui, B. Zhang, Y. Segawa, J. Cryst. Growth 1996, 159, 1168.
107. Y. Fujita, T. Tetada, T. Suzuki, Jpn. J. Appl. Phys. 1995, 34, L1034.
108. S. Zhang, N. Kobayashi, Jpn. J. Appl. Phys. 1992, 31, L666.
109. K. Morimoto, T. Fujino, Appl. Phys. Lett. 1993, 63, 2384.
110. B. Hahn, M. Deufel, M. Meier, M. Kastner, R. Blumberg, W. Gebhardt, J. Cryst. Growth 1997, 170, 472.
111. S. Akarm, I. Bhat, A. Melas, J. Electron. Mater. 1994, 23, 259.
112. A. Toda, F. Nakamura, K. Yanashima, A. Ishabashi, J. Cryst. Growth 1997, 170, 461.
113. S. Fujita, in Abstracts 7th Intl. Conf. Met. Org. Vap. Phase Epitaxy (Eds: Y. Horikoshi, S. Minagawa), Yokohama, Japan, May 31-June 3 1994.
114. U. Pohl, S. Freitag, J. Gottfriedsen, W. Richter, H. Schumann, J. Cryst. Growth 1997, 170, 144.
115. U. W. Pohl, J. Gottfriedsen, H. Schumann, unpublished.
116. G. Prosch, K. Hellig, R. Beyer, A. Schneider, H. Burghardt, W. Taudt, M. Heuken, D. Zahn, J. Cryst. Growth 1997, 170, 537.
117. Y. Noda, T. Ishikawa, M. Yamabe, Y. Hara, Appl. Surf Sci. 1997, 113/ 114, 28.
118. A. Yoshikawa, S. Matsumoto, S. Yamago, H. Kasai, J. Cryst. Growth 1990, 101, 305.
119. A. Kamata, J. Cryst. Growth 1994, 145, 557.
120. W. Taudt, S. Lampe, F. Sauerlander, J. Sollner, H. Hamadeh, M. Heuken, A. Jones, J. Rushworth, P. O'Brien, M. Malik, J. Cryst. Growth 1996, 196, 243.
121. R. Park, H. Mar, N. Salansky, J. Appl. Phys. 1985, 58, 1047.
122. Y. Hishida, T. Yoshie, K. Yagi, K. Yodoshi, T. Niina. Jpn. J. Appl. Phys. 1995, 35, 1415.
123. R. Park, M. Troffer, C. Rouleau, J. DePuydt, M. Haase, Appl. Phys. Lett. 1990, 57, 2127.
124. K. Ohkawa, T. Karasawa, T. Mitsuyu, Jpn. J. Appl. Phys. 1991, 30, L152.
125. T. Ohtsuka, K. Horie, Jpn. J. Appl. Phys. 1993, 32, L233.
126. K. Nishimura, Y. Nagao, K. Sakai, J. Cryst. Growth 1994, 138, 114.
127. W. Taudt, A. Hardt, S. Lampe, H. Hamadeh, M. Heuken, J. Cryst. Growth 1997, 170, 491.
128. D. Laks, C. Van de Walle, Physica B 1993, 185, 1993.
129. D. Laks, C. Van de Walle, G. Neumark, S. Pantelides, Appl. Phys. Lett. 1993, 63, 1375.
130. K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu, Physica B 1993, 185, 112.
131. I. Hauksson, J. Simpson, S. Wang, K. Prior, B. Cavenett, Appl. Phys. Lett. 1992, 61, 2208.
132. B. Murdin, B. Cavenett, C. Pidgeon, J. Simpson, I. Hauksson, K. Prior, Appl. Phys. Lett. 1993, 63, 2411.
133. Z. Zhu, K. Takebayashi, K. Tanaka, T. Ebisutani, J. Kawamata, T. Yao, Appl. Phys. Lett., 1994, 64, 91.
134. P. Boyce, J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu, Appl. Phys. Lett. 1994, 65, 2063.
135. S. Setzler, M. Moldovan, Z. Yu, T. Myers, N. Giles, L. Halliburton, Appl. Phys. Lett. 1997, 70, 2274.
136. K. Prior, W. Meredith, G. Brownlie, Z. Zhu, P. Thompson, J. Milnes, I. Hauksson, G. Horsburgh, T. Steele, S. Wang, B. Cavenett, Mater. Sci. Eng. 1997, B43, 9.
137. S. Poykko, M. Puska, R. Korhonen, R. Nieminen, Mater. Sci. Eng. 1997, B43, 1.
138. M. Moldovan, S. Setzler, T. Myers, L. Halliburton, N. Giles, Appl. Phys. Lett. 1997, 70, 1724.
139. M. Moldovan, S. Setzler, Z. Yu, T. Myers, L. Halliburton, N. Giles, J. Electron. Mater. 1997, 26, 732.
140. T. Yao, T. Matsumoto, S. Sasaki, C. Chung, Z. Zhu, F. Nishiyama, J. Cryst. Growth 1994, 138, 290.
141. B. Cheong, K. Chang, Mater. Sci. Forum 1995, 196-201, 303.
142. W. Faschinger, J. Cryst. Growth 1996, 159, 221.
143. H. Burger, W. Sawodny, U. Wannagat, J. Organomet. Chem. 1965, 3, 113.
144. W. Rees, Jr., D. Green, T. Anderson, E. Bretschneider, B. Pathangey, C. Park, J. Kim, J. Electron. Mater. 1992, 21, 361.
145. W. Rees, Jr., D. Green, T. Anderson, E. Bretschneider, Mater. Res. Soc. Proc. 1992, 242, 281.
146. E. Frankland, Proc. R. Soc. 1857, 8, 502.
147. M. Lappert, P. Power, A. Sanger, R. Srivastava, Metal and Metalloid Amides, Ellis Norwood, Chichester, UK 1980.
148. M. Malik, P. O'Brien, Polyhedron 1997, 16, 3593.
149. G. Coates, D. Ridley, J. Chem. Soc. 1965, 1870.
150. T. Cuvigny, H. Normant, Comptes Rend. 1969,268C, 834.
151. J. Noltes, J. Boersma, J. Organomet. Chem. 1969, 16, 345.
152. A. Haaland, K. Hedberg, P. Power, Inorg. Chem. 1984, 23, 1972.
153. W. Rees, Jr., D. Green, W. Hesse, Polyhedron 1992, 11, 1697.
154. W. Rees, Jr., D. Green, W. Hesse, T. Anderson, B. Pathangey, Mater. Res. Soc. Proc. 1992, 282, 63.
155. P. Power, K. Ruhlandt-Senge, S. Shoner, Inorg. Chem. 1991, 30, 5013.
156. L. Englehardt, P. Junk, W. Patalinghug, R. Sue, C. Raston, B. Skelton, A. White, J. Chem. Soc., Chem. Commun. 1991, 930.
157. H. Schumann, J. Gottfriedsen, S. Dechert, F. Girgsdies, Z. Anorg. Allg. Chem. 2000, 626, 747.
158. a) D. Gaul, Ph.D. Dissertation, Georgia Institute of Technology 1998.
159. b) D. Gaul, O. Just, W. S. Rees, Jr., unpublished results.
160. T. Matsuoka, A. Ohki, T. Ohno, Y. Kawaguchi, J. Cryst. Growth 1994, 138, 727.