P-type doping of beryllium chalcogenides

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 88-91

  Lugauer, H J ^a   Fischer, F ^a   Litz, T ^a   Waag, A ^a   Zehnder, U ^a   Ossau, W ^a   Gerhard, T ^a   Landwehr, G ^a   Becker, C ^b   Kruse, R ^b   Geurts, J ^a,b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Beryllium chalcogenides; Laser diodes; Molecular beam epitaxy

Indexed keywords

ELECTRIC RESISTANCE; ENERGY GAP; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BERYLLIUM CHALCOGENIDES; FAR INFRARED REFLECTIVITY (FIR) SPECTROSCOPY; FREE HOLE CONCENTRATIONS; LATTICE MATCHING; SINGLE QUANTUM WELLS (SQW); VAN DER PAUW MEASUREMENTS;

BERYLLIUM COMPOUNDS;

EID: 0038133898     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01838-7     Document Type: Article

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