Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 467-471

  Bevan, M J ^a   Shih, H D ^a   Liu, H Y ^a   Syllaios, A J ^a   Duncan, W M ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

ZINC SELENIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030653606     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00591-X     Document Type: Article

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