Compensation in p-type ZnSe based semiconductors

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 9-15

  Prior, K A ^a   Meredith, W ^a   Brownlie, G D ^a   Zhu, Z ^b   Thompson, P J ^a   Milnes, J S ^a   Hauksson, I S ^a   Horsburgh, G ^a   Steele, T A ^a   Wang, S Y ^a   Cavenett, B C ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Compensation; Deep levels; N doping; ZnSe

Indexed keywords

FERMI LEVEL; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING;

HYDROGEN PLASMA EXPOSURE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0005224927     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01822-3     Document Type: Article

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