Beryllium chalcogenides for ZnSe-based light emitting devices

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 65-70

  Waag, A ^a   Fischer, F ^a   Lugauer, H J ^a   Litz, Th ^a   Gerhard, T ^a   Nurnberger J ^a   Lunz, U ^a   Zehnder, U ^a   Ossau, W ^a   Landwehr, G ^a   Roos, B ^b   Richter, H ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b IHP   (Germany)

Author keywords

Beryllium chalcogenide; Light emitting device; Molecular beam epitaxy; Zinc selenide

Indexed keywords

BERYLLIUM COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS;

BERYLLIUM CHALCOGENIDES; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0002300110     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01911-3     Document Type: Article

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