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Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 28-32

Growth of ZnSe thin films by metalorganic chemical vapor deposition using nitrogen trifluoride

(4) Noda, Yasutoshi a Ishikawa, Tetsuya a Yamabe, Mitsuharu a Hara, Yoshinori a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Co reactant; D A pair emission; Growth rate; MOCVD; Photoluminescence; Zincselenide

Indexed keywords

FREE RADICALS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN COMPOUNDS; OHMIC CONTACTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS;

DEALKYLATION; DIETHYLSELENIDE; DIETHYLZINC; DONOR ACCEPTOR PAIR EMISSION; HALL COEFFICIENT; NITROGEN TRIFLUORIDE; ZINC SELENIDE;

FILM GROWTH;

EID: 0031547324 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00811-2 Document Type: Article

Times cited : (14)

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