Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxy

Journal of Crystal Growth

Volumn 169, Issue 2, 1996, Pages 243-249

  Taudt, W ^a   Lampe, S ^a   Sauerlander F ^a   Sollner J ^a   Hamadeh, H ^a   Heuken, M ^a   Jones, A C ^b   Rushworth, S ^b   O'Brien, P ^c   Malik, M A ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b Epichem Limited   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

BISDITRIMETHYLSILYLAMIDOZINC (ZNBTM); HALL MEASUREMENTS; TRIALLYLAMINE (TAN); TRIMETHYSILYLAZIDE (TMSIN); ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030566297     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00403-4     Document Type: Article

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