Diode characteristics of Li3N-diffused ZnSe grown by MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 503-506

  Honda, T ^a   Lim, S W ^a,b   Inoue, K ^a   Hara, K ^a   Munekata, H ^a   Kukimoto, H ^a   Koyama, F ^a   Iga A, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

LASER DIODES; ZINC SELENIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030698927     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00616-1     Document Type: Article

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