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Volumn 32, Issue 6, 1996, Pages 552-553
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100h II-VI blue-green laser diode
a a a a a a a |
Author keywords
II VI semiconductors; Semiconductor junction lasers; Visible semiconductor lasers
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Indexed keywords
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
CURRENT DENSITY;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR JUNCTIONS;
SEMICONDUCTOR MATERIALS;
SILICON WAFERS;
SUBSTRATES;
TEMPERATURE;
BLUE GREEN LASER DIODE;
RECOMBINATION ENHANCED DEFECT REACTION;
VISIBLE SEMICONDUCTOR LASERS;
SEMICONDUCTOR LASERS;
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EID: 0030109987
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19960415 Document Type: Article |
Times cited : (244)
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References (6)
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