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IBM Journal of Research and Development

Volumn 44, Issue 4, 2000, Pages 517-533

Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy

(1) Ludeke, R a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DYNAMIC RESPONSE; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ENERGY GAP; KINETIC ENERGY; MOS DEVICES; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; HOT-ELECTRON EFFECTS;

ELECTRON MICROSCOPY;

EID: 0034225126 PISSN: 00188646 EISSN: None Source Type: Journal
DOI: 10.1147/rd.444.0517 Document Type: Article

Times cited : (18)

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