Localized degradation studies of ultrathin gate oxides

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1735-1740

  Wen, H J ^a   Ludeke, R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRONS; DEGRADATION STUDY; ELECTRON ENERGIES; ELECTRON TRAPPING; FOWLER-NORDHEIM INJECTION; FOWLER-NORDHEIM STRESS; GATE METALS; HOLE INJECTION; INTRINSIC BREAKDOWN; METAL OXIDE SEMICONDUCTOR STRUCTURES; MICROSCOPIC SCALE; OXIDE RELIABILITY; POSITIVE CHARGES; SCANNING TUNNELING MICROSCOPES; THIN OXIDES; TIP BIAS; ULTRA THIN GATE OXIDE;

DIELECTRIC DEVICES; ELECTRON INJECTION; ELECTRON MOBILITY; HOLE TRAPS; MOS CAPACITORS; OXIDES; SILICON COMPOUNDS;

ELECTRONS;

EID: 0000843992     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581293     Document Type: Article

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