Complete characterization of AlxGa1-xN/InxGa1-xN/GaN devices by SIMS

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 281-285

  Huang, C ^a   Mitha, S ^a   Erickson, J W ^a   Clark Phelps, H ^a   Sheng, J ^a   Gao, Y ^a  

^a CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; IMPURITIES; NITRIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

COMPLETE CHARACTERIZATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030659346     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-281     Document Type: Conference Paper

References (5)