Role of impurities in LP-MOCVD grown gallium nitride

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 521-526

  Hwang, C Y ^a   Li, Y ^a   Schurman, M J ^a   Mayo, W E ^a   Lu, Y ^a   Stall, R A ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; STOICHIOMETRY;

DEFECT DENSITY; GALLIUM NITRIDE; HALL ELECTRON MOBILITY;

CRYSTAL IMPURITIES;

EID: 0029726604     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)