Diluent gas effects on properties of AlN and GaN thin films grown by metallorganic vapor phase epitaxy on α(6H)-SiC substrates

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 149-154

  Hanser, Andrew ^a   Wolden, Colin ^a   Perry, William ^a   Zheleva, Tsvetanka ^a   Carlson, Eric ^a   Hartlieb, Philip ^a   Davis, Robert F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; FILM GROWTH; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031343716     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)