Residual donors in GaN epitaxial films - A correlation of HALL effect, SIMS and photoluminescence data

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1323-1326

  Topf, M ^a   Kriegseis, W ^a   Burkhardt, W ^a   Dirnstorfer, I ^a   Meister, D ^a   Meyer, B K ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

GaN; Hall; Photoluminescence; Residual Donors; SIMS

Indexed keywords

CARBON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; EXCITONS; FILM GROWTH; HALL EFFECT; OXYGEN; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

GALLIUM NITRIDE EPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0031648432     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1323     Document Type: Article

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