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Volumn 47, Issue 4, 2000, Pages 789-796

Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; DIFFERENTIATION (CALCULUS); ELECTRIC CHARGE; ELECTRON TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); ITERATIVE METHODS; STRESS ANALYSIS; TRANSCONDUCTANCE;

EID: 0033889732     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830995     Document Type: Article
Times cited : (52)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.