Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 789-796

  Mahapatra, S ^a   Parikh, Chetan D ^b   Ramgopal Rao, V ^a   Viswanathan, Chand R ^b   Vasi, Juzer ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; DIFFERENTIATION (CALCULUS); ELECTRIC CHARGE; ELECTRON TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); ITERATIVE METHODS; STRESS ANALYSIS; TRANSCONDUCTANCE;

CHARGE PUMPING (CP) METHOD; HOT-CARRIER DEGRADATION PROCESS;

MOSFET DEVICES;

EID: 0033889732     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830995     Document Type: Article

References (34)

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