A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 81-89

  Lee Giahn Horng, Robert ^a   Su, Jen Shien ^a   Chung, Steve S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; HOT CARRIERS; MOS DEVICES; PERMITTIVITY; SEMICONDUCTOR DEVICE TESTING; SUBSTRATES;

CHARGE PUMPING CURRENT; CHARGE PUMPING MEASUREMENTS; DRAIN CURRENT CHARACTERISTICS; OXIDE TRAPPED CHARGED; SPATIAL DISTRIBUTIONS; TWO DIMENSIONAL DEVICE SIMULATION;

MOSFET DEVICES;

EID: 0029774193     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477596     Document Type: Article

References (14)

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