Analysis on Gate-Oxide Thickness Dependence of Hot-Carrier-Induced Degradation in Thin-Gate Oxide nMOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1496-1503

  Toyoshima, Yoshiaki ^a   Iwai, Hiroshi ^a   Matsuoka, Fumitomo ^a   Hayashida, Hiroyuki ^a   Maeguchi, Kenji ^a   Kanzaki, Koichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

COULOMB SCATTERING; DEGRADED MOSFET MODEL; GATE-OXIDE THICKNESS; MOBILITY DEGRADATION; NMOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025445360     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106245     Document Type: Article

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