Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 230-231

  Chen, C ^a   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); OXIDES;

CHANNEL HOT CARRIER; CHARGE PUMPING METHOD; DIRECT LATERAL PROFILING; INTERFACE TRAPS; LOCALIZED HOT CARRIER DAMAGE; OXIDE CHARGE;

MOSFET DEVICES;

EID: 0029701094     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)