Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

International Journal of Electronics

Volumn 85, Issue 1, 1998, Pages 1-9

  Gu, Y ^a   Yuan, J S ^a  

^a University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242358921     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072198134300     Document Type: Article

References (18)

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