Carrier transport related analysis of high-power AlGaN/GaN HEMT structures

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 308-312

  Shah, Pankaj B ^a,b   Smith, Doran D ^a   Griffin, Timothy E ^a   Jones, Kenneth A ^a   Sheppard, Scott T ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SHUBNIKOV-DE HAAS EFFECT; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033875264     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822273     Document Type: Article

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