High electron mobility transistor based on a GaN-AlxGa 1-xN heterojunction

Applied Physics Letters

Volumn 63, Issue 9, 1993, Pages 1214-1215

  Asif Khan, M ^a   Bhattarai, A ^a   Kuznia, J N ^a   Olson, D T ^a  

^a APA Optronics   (United States)

Author keywords

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Indexed keywords

EID: 0842277372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109775     Document Type: Article

References (8)