Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 92-95

  Contreras, S ^a   Knap, W ^a   Skierbiszewski, Cz ^a,c   Alause, H ^a   Robert, J L ^a   Asif Khan, M ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b APA Optronics   (United States)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

GaN GaAlN heterostructure; Magnetoresistance; Quantum Hall effect

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETIC FIELD MEASUREMENT; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

QUANTUM HALL EFFECT;

HETEROJUNCTIONS;

EID: 0043228234     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01939-3     Document Type: Article

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