High transconductance heterostructure field-effect transistors based on AIGaN/GaN

Applied Physics Letters

Volumn 69, Issue 6, 1996, Pages 794-796

  Chen, Q ^a   Khan, M Asif ^a   Yang, J W ^a   Sun, C J ^a   Shur, M S ^b   Park, H ^c  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); HETEROJUNCTIONS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CHANNEL CONDUCTANCE; GATE LENGTH; GATE WIDTH; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; MAXIMUM TRANSCONDUCTANCE; SERIES RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030570708     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117894     Document Type: Article

References (6)

1. A. Bykhovski, B. Gelmont, M. Shur, and M. A. Khan, J. Appl. Phys. 77, 1616 (1995).
2. M. A. Khan, Q. Chen, C. J. Sun, M. S. Shur, and B. L. Gelmont, Appl. Phys. Lett. 67, 1429 (1995).
3. M. A. Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burn, and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995).
4. After our submission on November 1995, it had come to our attention that Aktas and co-workers presented HFET results at the IEDM (December, 1995). dc transconductance of 120 mS/mm was reported for a 3 μm gate HFET operating in enhancement mode. O. Aktas, W. Kim, Z. Fan, F. Stengel, A. Botchkarev, A. Salvador, B. Sverdlov, S. N. Mohammad, and H. Morkoç, IEDM-95 (unpublished), abstract, p. 205.
5. M. A. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, Appl. Phys. Lett. 65, 1121 (1995).
6. K. Lee, M. S. Shur, T. A. Fjeldly, and T. Ytterdal, in Semiconductor Device Modeling for VLSI (Prentice-Hall, Englewood Cliffs, NJ, 1993).