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Volumn 7, Issue 3, 2000, Pages 316-321

Effects of O2 rapid thermal annealing on the microstructural properties and reliability of RF-sputtered Ta2O5 films

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; HOLE TRAPS; LEAKAGE CURRENTS; OXYGEN; POINT DEFECTS; RAPID THERMAL ANNEALING; RELIABILITY; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

EID: 0033691112     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/94.848906     Document Type: Article
Times cited : (2)

References (39)
  • 5
    • 0004838740 scopus 로고
    • 5 Gate Oxide Prepared by Plasma Enhanced Metalorganic Chemical Vapor Deposition
    • 5 Gate Oxide Prepared by Plasma Enhanced Metalorganic Chemical Vapor Deposition", J. Vac. Sci. Technol., Vol. B12, pp. 3006-3009, 1994.
    • (1994) J. Vac. Sci. Technol. , vol.B12 , pp. 3006-3009
    • Kim, S.O.1    Kim, H.J.2
  • 8
    • 0026624261 scopus 로고
    • Effects of Oxidation Conditions on the Properties of Tantalum Oxide Films on Silicon Substrates
    • S. W. Park and H. B. Im, "Effects of Oxidation Conditions on the Properties of Tantalum Oxide Films on Silicon Substrates", Thin Solid Films, Vol. 207, pp. 258-264, 1992.
    • (1992) Thin Solid Films , vol.207 , pp. 258-264
    • Park, S.W.1    Im, H.B.2
  • 9
  • 10
    • 0028728394 scopus 로고
    • MIS Diodes on N-INP with Tantalum Oxide Interfadal Layer Grown by Rapid Thermal Oxidation of Tantalum
    • G. Eftekhari, "MIS Diodes on N-INP with Tantalum Oxide Interfadal Layer Grown by Rapid Thermal Oxidation of Tantalum", Phys. Status. Solid, Vol. A146, pp. 867-871, 1994.
    • (1994) Phys. Status. Solid , vol.A146 , pp. 867-871
    • Eftekhari, G.1
  • 18
    • 34548803499 scopus 로고
    • Solgel Derived Tantalum Pentoxide Films as Ultraviolet Antireflective Coatings for Silicon
    • T. J. Rehg, J. A. Ochoa-Tapia, A. Knoesen and B. G. Higgins, "Solgel Derived Tantalum Pentoxide Films as Ultraviolet Antireflective Coatings for Silicon", Appl. Opt., Vol. 28, pp. 5215-5221, 1989.
    • (1989) Appl. Opt. , vol.28 , pp. 5215-5221
    • Rehg, T.J.1    Ochoa-Tapia, J.A.2    Knoesen, A.3    Higgins, B.G.4
  • 19
    • 0027609883 scopus 로고
    • Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation Prior to Low Pressure Chemical Vapor Deposition
    • S. Kamiyama, P. Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama and A. Ishitani, "Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation Prior to Low Pressure Chemical Vapor Deposition", J. Electrochem. Soc., Vol. 140, no. 140, pp. 1617-1624, 1993.
    • (1993) J. Electrochem. Soc. , vol.140 , Issue.140 , pp. 1617-1624
    • Kamiyama, S.1    Lesaicherre, P.Y.2    Suzuki, H.3    Sakai, A.4    Nishiyama, I.5    Ishitani, A.6
  • 27
    • 0016081559 scopus 로고
    • Deep-Level Transient Spectroscopy: A new method to characterize traps in semiconductors
    • D. V. Lang, "Deep-Level Transient Spectroscopy: A new method to characterize traps in semiconductors", J. Appl. Phys., Vol. 45, no. 7, pp. 3023-3032, 1974.
    • (1974) J. Appl. Phys. , vol.45 , Issue.7 , pp. 3023-3032
    • Lang, D.V.1
  • 28
    • 0029387934 scopus 로고
    • 2 on the Electrical Properties of Tantalum Oxide Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
    • 2 on the Electrical Properties of Tantalum Oxide Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition", J. Electronic Materials, Vol. 24, pp. 1435-1441, 1995.
    • (1995) J. Electronic Materials , vol.24 , pp. 1435-1441
    • Kim, I.1    Kim, J.S.2    Kwon, O.S.3    Ahn, S.T.4    Chun, J.S.5    Lee, W.J.6
  • 34
    • 0022957162 scopus 로고
    • Degradation of very thin gate oxide MOS devices under dynamic high field/current stress
    • M. S. Liang, S. Hadded, W. Cox and S. Cagnina, "Degradation of very thin gate oxide MOS devices under dynamic high field/current stress", Tech. Digest IEDM, pp. 394-397, 1986.
    • (1986) Tech. Digest IEDM , pp. 394-397
    • Liang, M.S.1    Hadded, S.2    Cox, W.3    Cagnina, S.4
  • 36
    • 0027811720 scopus 로고
    • Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions
    • E. Rosenbaum, Z. Liu, and C. Hu, "Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions", IEEE Trans. Electron Devices, Vol. 40, pp. 2287-2295, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 2287-2295
    • Rosenbaum, E.1    Liu, Z.2    Hu, C.3
  • 37
    • 0028444966 scopus 로고
    • Bipolar stressing, breakdown, and trap generation in thin silicon oxide
    • D. J. Dumin and S. Vanchinathan, "Bipolar stressing, breakdown, and trap generation in thin silicon oxide", IEEE Trans. Electron Devices, Vol. 41, pp. 936-940, 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 936-940
    • Dumin, D.J.1    Vanchinathan, S.2
  • 38
    • 0021497732 scopus 로고
    • Improvements in the determination of interface state density using deep level transient spectroscopy
    • W. D. Eades and R. M. Sghjwanson, "Improvements in the determination of interface state density using deep level transient spectroscopy", J. Appl. Phys., Vol. 56, pp. 1744-1751, 1984.
    • (1984) J. Appl. Phys. , vol.56 , pp. 1744-1751
    • Eades, W.D.1    Sghjwanson, R.M.2
  • 39
    • 0001246324 scopus 로고
    • Energy-resolved DLTS measurement of interface states in MIS structures
    • N. M. Johnson, "Energy-resolved DLTS measurement of interface states in MIS structures", Appl. Phys. Lett., Vol. 34, pp. 802-804, 1979.
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 802-804
    • Johnson, N.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.