Effects of Ir electrodes on Barium Strontium Titanate thin-film capacitors for high-density memory application

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2304-2310

  Chen, Tung Sheng ^a   Balu, Venkatasubramani ^a   Katakam, Shylaja ^a   Lee, Jian Hung ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CURRENT DENSITY; DATA STORAGE EQUIPMENT; ELECTRIC CONTACTS; ELECTRODES; IRIDIUM; LEAKAGE CURRENTS; POLARIZATION; THIN FILM DEVICES;

BARIUM STRONTIUM TITANATE; THIN FILM CAPACITORS;

MOS CAPACITORS;

EID: 0033332474     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808068     Document Type: Article

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