New electrode technology for high-density nonvolatile ferroelectric (SrBi2Ta2O9) memories

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 26-27

  Jiang, Bo ^a   Balu, Venkatasubramani ^a   Chen, Tung Sheng ^a   Kuah, Shao Hong ^a   Lee, Jack C ^a   Chu, Peir Y ^a   Jones, Robert E ^a   Zurcher, Peter ^a   Taylor, Deborah J ^a   Kottke, Michael L ^a   Gillespie, Sherry J ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; IRIDIUM; IRIDIUM COMPOUNDS; LEAKAGE CURRENTS; MECHANICAL PROPERTIES; NONVOLATILE STORAGE;

FATIGUE RESISTANCE; FERROELECTRIC CAPACITORS; IRIDIUM DIOXIDE; NONVOLATILE FERROELECTRIC RANDOM ACCESS MEMORIES;

ELECTRODES;

EID: 0029719725     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)