Base electrodes for high dielectric constant oxide materials in silicon technology

Journal of Materials Research

Volumn 7, Issue 12, 1992, Pages 3260-3265

  Grill, A ^a   Kane, W ^a   Viggiano, J ^a   Brady, M ^a   Laibowitz, R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRODES; ELECTROMAGNETIC WAVE BACKSCATTERING; OXIDES;

BASE ELECTRODES; CONDUCTIVE STRUCTURES; ELECTRICAL CONNECTIVITY; RUTHERFORD BACKSCATTERING; SILICON SUBSTRATE; VLSI CAPACITORS;

VLSI CIRCUITS;

EID: 0026982218     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/JMR.1992.3260     Document Type: Article

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