Dielectric properties of (BaxSr1–x)TiO3 thin films prepared by rf sputtering for dynamic random access memory application

Japanese Journal of Applied Physics

Volumn 33, Issue 9 S, 1994, Pages 5187-5191

  Kuroiwa, Takeharu ^a   Tsunemine, Yoshikazu ^a   Horikawa, Tsuyoshi ^a   Makita, Tetsuro ^a   Tanimura, Jyunji ^a   Mikami, Noboru ^a   Sato, Kazunao ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(BaxSr1 x)TiO3; Capacitor; Dielectric constant; DRAM; Leakage current density; Rf sputtering; SiO2 equivalent thick ness; Thin film

Indexed keywords

BARIUM TITANATE; CAPACITORS; COMPOSITION EFFECTS; CURRENT DENSITY; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; PERMITTIVITY; RANDOM ACCESS STORAGE; SILICA; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT; THIN FILMS;

EQUIVALENT THICKNESS; RADIOFREQUENCY SPUTTERING; STRONTIUM TITANATE;

FERROELECTRIC MATERIALS;

EID: 0028508338     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.5187     Document Type: Article

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