Novel low-temperature process for high dielectric constant BST thin films for ULSI DRAM applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 127-128

  Khamankar, Rajesh ^a   Jiang, Bo ^a   Tsu, Robert ^a   Hsu, Wei Yung ^a   Nulman, Jain ^a   Summerfelt, Scott ^a   Anthony, Mark ^a   Lee, Jack ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITORS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; PERMITTIVITY; POLARIZATION; RANDOM ACCESS STORAGE; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; SPUTTER DEPOSITION; ULSI CIRCUITS;

BARIUM STRONTIUM TITANIUM OXIDE THIN FILMS; ELECTRICAL STRESS; HIGH CHARGE STORAGE DENSITY; HIGH TEMPERATURE ANNEAL; LOW-TEMPERATURE DEPOSITION; POST-DEPOSITION PROCESSING STEPS; STORAGE CAPACITORS; ULSI DIGITAL RANDOM ACCESS STORAGE CAPACITORS;

THIN FILMS;

EID: 0029544311     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)