La doped PZT films for gigabit DRAM technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 151-152

  Kim, Jiyoung ^a   Khamankar, Rajesh ^a   Sudhama, C ^a   Jiang, Bo ^a   Lee, Jack ^a   Maniar, Papu ^a   Moazzami, Reza ^a   Jones, Robert ^a   Mogab, C J ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEGRADATION; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC PROPERTIES; FATIGUE OF MATERIALS; LANTHANUM; LEAD COMPOUNDS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; RELIABILITY;

CHARGE STORAGE DENSITY; DIELECTRIC CONSTANT; DYNAMIC RANDOM ACCESS MEMORY; LEAD ZIRCONATE TITRANATE FILMS;

DIELECTRIC FILMS;

EID: 0028594652     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)