Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO3 and RIE patterned RuO2/TiN storage nodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 831-834

  Lesaicherre, P Y ^a   Yamamichi, S ^a   Yamaguchi, H ^a   Takemura, K ^a   Watanabe, H ^a   Tokashiki, K ^a   Satoh, K ^a   Sakuma, T ^a   Yoshida, M ^a   Ohnishi, S ^a   Nakajima, K ^a   Shibahara, K ^a   Miyasaka, Y ^a   Ono, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC FILMS; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; REACTIVE ION ETCHING; RUTHENIUM COMPOUNDS; STRONTIUM COMPOUNDS; TITANIUM NITRIDE; TITANIUM OXIDES;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); RUTHENIUM DIOXIDE/TITANIUM NITRIDE STORAGE NODES; STRONTIUM TITANATE;

RANDOM ACCESS STORAGE;

EID: 19244387190     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)