Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals

Journal of Crystal Growth

Volumn 207, Issue 1, 1999, Pages 1-7

  Foxon, C T ^a   Cheng, T S ^a   Novikov, S V ^a,b   Korakakis, D ^a   Jeffs, N J ^a   Grzegory, I ^c   Porowski, S ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033316745     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00354-1     Document Type: Article

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