Fabrication of multi-level buried oxide layers by oxygen-ion-implantation into Si/Ge multilayers

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 211-216

  Ogino, Toshio ^a   Kobayashi, Yoshihiro ^a   Prabhakaran, Kuniyil ^a   Sumitomo, Koji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; OXYGEN; SEMICONDUCTING GERMANIUM; SILICA; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE LAYER; SEPARATION BY IMPLANTED OXYGEN;

MULTILAYERS;

EID: 0030373780     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-211     Document Type: Conference Paper

References (22)