Co-Integrated Resonant Tunneling and Heterojunction Bipolar Transistor Full Adder

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 419-422

  Seabaugh, A C ^a   Taddiken, A H ^a   Beam, E A ^a   Randall, J N ^a   Kao, Y C ^a   Newell, B ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM PHOSPHIDE; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; ELECTRON TUNNELING; INDIUM COMPOUNDS; INTEGRATED CIRCUITS; SUBSTRATES;

COLLECTOR CURRENTS; CURRENT RATIOS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; FULL ADDERS; INP SUBSTRATES;

III-V SEMICONDUCTORS; BIPOLAR TRANSISTORS;

ADDER; CO INTEGRATED RESONANT TUNNELING; HETEROEPITAXY;

EID: 0027807140     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. M. Takatsu, K. Imamura, H. Ohnishi, T. Mori, T. Adachihara, S. Muto, and N. Yokoyama, "Logic circuits using resonant-tunneling hot-electron transistors (RHET's)", IEEE J. Solid-State Circuits, vol. 27, pp. 1428-1430 (1992).
3. K. Imamura, M. Takatsu, T. Mori, T. Adachihara, H. Ohnishi, S. Muto, and N. Yokoyama, "A full adder using resonant-tunneling hot electron transistors (RHET's)", IEEE Trans. Electron Dev., vol. 39, pp. 2707-2710 (1992).
4. T. S. Moise, A. C. Seabaugh, E. A. Beam III, and J. N. Randall, "Room temperature resonant-tunneling hot-electron transistor exclusive-NOR integrated circuit", IEEE Electron Dev. Lett., vol. 14, pp. 441-443 (1993).
5. E. A. Beam III, H. F. Chau, T. S. Henderson, W. Liu, and A. C. Seabaugh, "The use of organometallic group-V sources for the MOMBE of InGaP/GaAs and InGaAs/InP heterojunction bipolar device structures", accepted for publication J. Cryst. Growth (1993).
6. A. C. Seabaugh, E. A. Beam III, A. H. Taddiken, J. N. Randall, and Y.-C. Kao, "Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP", IEEE Electron Dev. Lett., vol. 14, pp. 472-474 (1993).
7. BANDPROF heterojunction device simulator, W. R. Frensley (1993).
8. A. C. Seabaugh, A. H. Taddiken, E. A. Beam III, J. N. Randall, Y.-C. Kao, and B. Newell, "Room temperature resonant tunneling bipolar transistor XNOR and XOR integrated circuits", accepted for publication Electronics Lett. (1993).