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Volumn 1992-December, Issue , 1992, Pages 475-478

Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM application

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MONOLITHIC INTEGRATED CIRCUITS; RESONANT TUNNELING; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STATIC RANDOM ACCESS STORAGE; TEMPERATURE MEASURING INSTRUMENTS; TRANSISTORS;

EID: 33746992558     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307404     Document Type: Conference Paper
Times cited : (11)

References (8)
  • 2
    • 0026254856 scopus 로고
    • 1. 2-ns HEMT 64-kb SRAM
    • Nov.
    • M. Suzuki, et. al., "1. 2-ns HEMT 64-kb SRAM, " IEEE J. Solid-State Circuits. Vol. SC-26 pp. 1571-1576 Nov. 1991
    • (1991) IEEE J. Solid-State Circuits. , vol.SC-26 , pp. 1571-1576
    • Suzuki, M.1
  • 3
    • 0026254941 scopus 로고
    • A 45K-gate HEMT array with 35-ps DCFL and 50-ps BDCFL gates
    • Nov.
    • S. Notomi, et. al., "A 45K-gate HEMT array with 35-ps DCFL and 50-ps BDCFL gates, " IEEE J. SolidState Circuits. Vol. SC-26 pp. 1621-1625 Nov. 1991
    • (1991) IEEE J. SolidState Circuits. , vol.SC-26 , pp. 1621-1625
    • Notomi, S.1
  • 4
    • 33646912073 scopus 로고
    • Resonant-tunneling-diode loads: Speed limit and applications in fast logic circuits
    • Feb.
    • E. R. Brown, M. A. Hollis, F. W. Smith, K-C. Wang, and P. M. Asbeck, "Resonant-tunneling-diode loads: speed limit and applications in fast logic circuits, " in ISSCC Dig. Tech. Papers, pp. 142-143, Feb., 1992.
    • (1992) ISSCC Dig. Tech. Papers , pp. 142-143
    • Brown, E.R.1    Hollis, M.A.2    Smith, F.W.3    Wang, K.-C.4    Asbeck, P.M.5
  • 5
    • 0018534763 scopus 로고
    • GaAs enhancement mode FET-tunnel diode ultra-fast low power inverter and memory cell
    • Oct.
    • K. Lehovec., "GaAs enhancement mode FET-tunnel diode ultra-fast low power inverter and memory cell, " IEEE J. Solid-State Circuits. Vol. SC-14 pp. 797-800 Oct. 1979.
    • (1979) IEEE J. Solid-State Circuits. , vol.SC-14 , pp. 797-800
    • Lehovec, K.1
  • 6
    • 0344433760 scopus 로고
    • Monolithic integration ofGaAs/AIGaAs resonant tunnel diode load and GaAs enhancement-mode MESFET driver for tunnel diode FET logic gates
    • Atlanta
    • K. L. Lear, K. Yoh, and J. S. Harris, Jr., "Monolithic integration ofGaAs/AIGaAs resonant tunnel diode load and GaAs enhancement-mode MESFET driver for tunnel diode FET logic gates, " Int. Symp. GaAs and related Compounds, Atlanta, pp. 593-598, 1988.
    • (1988) Int. Symp. GaAs and Related Compounds , pp. 593-598
    • Lear, K.L.1    Yoh, K.2    Harris, J.S.3
  • 7
    • 0026820499 scopus 로고
    • Multivalued SRAM using resonant tunneling diodes
    • Feb.
    • S. J. Wei and H. C. Lin, "Multivalued SRAM using resonant tunneling diodes, " IEEE J. SolidState Circuits. Vol. SC-27 pp. 212-216 Feb. 1992.
    • (1992) IEEE J. SolidState Circuits. , vol.SC-27 , pp. 212-216
    • Wei, S.J.1    Lin, H.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.