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Volumn 1992-December, Issue , 1992, Pages 475-478
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Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM application
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM COMPOUNDS;
HIGH ELECTRON MOBILITY TRANSISTORS;
III-V SEMICONDUCTORS;
INDIUM PHOSPHIDE;
MONOLITHIC INTEGRATED CIRCUITS;
RESONANT TUNNELING;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
STATIC RANDOM ACCESS STORAGE;
TEMPERATURE MEASURING INSTRUMENTS;
TRANSISTORS;
EPITAXIALLY GROWN;
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT);
INTEGRATED STRUCTURE;
MONOLITHIC INTEGRATION;
NEGATIVE DIFFERENTIAL RESISTANCES;
PEAK TO VALLEY CURRENT RATIO;
SINGLE TRANSISTORS;
SRAM APPLICATIONS;
RESONANT TUNNELING DIODES;
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EID: 33746992558
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1992.307404 Document Type: Conference Paper |
Times cited : (11)
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References (8)
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