Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Volumn , Issue , 1992, Pages 489-492

  Kao, Y C ^a   Seabaugh, A C ^a   Yuan, H T ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; HYSTERESIS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTEGRATED OPTOELECTRONICS; PIXELS; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE MEASURING INSTRUMENTS;

CONSTANT CURRENT LOAD; DOUBLE-BARRIER STRUCTURES; MULTI-VALUED MEMORY; PEAK SPACING; PEAK-TO-VALLEY RATIOS; SERIES RESISTANCES; STRUCTURAL MODIFICATIONS; VERTICAL INTEGRATION;

RESONANT TUNNELING DIODES;

EID: 33746946851     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.1992.235557     Document Type: Conference Paper

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