Pulsed laser deposition and processing of wide band gap semiconductors and related materials

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 275-286

  Vispute, R D ^a,b   Choopun, S ^a   Enck, R ^a   Patel, A ^a   Talyansky, V ^a   Sharma, R P ^a   Venkatesan, T ^a   Sarney, W L ^b   Salamancariba, L ^b   Andronescu, S N ^c   Iliadis, A A ^c   Jones, K A ^d  

^a Bldg 142   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; EPITAXIAL GROWTH; EXCIMER LASERS; HETEROJUNCTIONS; LASER ABLATION; NITRIDES; POLYCRYSTALLINE MATERIALS; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS;

PULSED LASER DEPOSITION; WIDE BAND GAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0032678019     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0027-9     Document Type: Article

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