GaN and related materials for device applications

MRS Bulletin

Volumn 22, Issue 2, 1997, Pages 17-19

  Pearton, Stephen J ^{a,b,c,d,e,f,g,h,i}   Kuo, Chihping ^j,k,l   Khan, Asif ^m,n  

^a University of Florida   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF TASMANIA   (Australia)

^f AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^g ELECTROCHEMICAL SOCIETY   (United States)

^h AMERICAN PHYSICAL SOCIETY   (United States)

ⁱ Inst Elec Electronics Engineers   (United States)

^j UNIVERSITY OF UTAH   (United States)

^k HEWLETT PACKARD COMPANY   (United States)

^l Optoelectronics Division

^m MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

ⁿ HONEYWELL   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ION IMPLANTATION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; RELATED MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031073768     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/s0883769400032516     Document Type: Article

References (24)

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