Double heterostructure based on ZnO and MgxZn1-xO

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1463-1466

  Ohtomo, A ^a   Kawasaki, M ^a   Koida, T ^a   Koinuma, H ^a,b   Sakurai, Y ^c   Yoshida, Y ^c   Sumiya, M ^d   Fuke, S ^d   Yasuda, T ^e   Segawa, Y ^e  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOYO UNIVERSITY   (Japan)

^d SHIZUOKA UNIVERSITY   (Japan)

^e INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Double Heterostructure; Mgxzn1 xo; Widegap Semiconductor; Zinc Oxide

Indexed keywords

ELECTRON EMISSION; EPITAXIAL GROWTH; EXCITONS; FILM PREPARATION; MAGNESIUM COMPOUNDS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

WIDEGAP SEMICONDUCTOR MATERIALS;

HETEROJUNCTIONS;

EID: 4344663934     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

1. P. Yu, Z. K. Tang. George K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Proc. Int'l. Conf. on the Phys. of Semicond. Vol. 2 1453 (1996).
2. A. Ohtomo, M. Kawasaki, Y. Sakurai, Y. Yoshida, H. Koinuma, P. Yu, Z. K. Tang, George K. L. Wong, Y. Segawa, J. Mat. Sci Eng. B, in press (1997).
3. A. Ohtomo, M. Kawasaki, T. Koida, Y. Sakurai, Y. Yoshida, T. Yasuda, Y. Segawa, and H. Koinuma, submitted in Appl. Phys. Lett.
4. J. F. Sarver, Fred L. Katnack, and F. A. Hummel, J. Electrochem, Soc. 106, 960 (1959).
5. H. Koinuma, M. Kawasaki, and M. Yoshimoto, Mat. Res. Soc. Symp. Proc., 397 (1996) 145.
6. W. Vandervorst, H. E. Maes, and R. F. DeKeersmaecker, J. Appl. Phys. 56 (1987) 1425.