Pinning-controlled ohmic contacts: Application to SiC(0001)

Applied Surface Science

Volumn 107, Issue , 1996, Pages 218-221

  Hara, S ^a   Teraji, T ^a,b   Okushi, H ^a   Kajimura, K ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; FERMI LEVEL; INTERFACES (MATERIALS); INTERFACIAL ENERGY; PASSIVATION; PH EFFECTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

HYDROGEN FLUORIDES; PINNING CONTROLLED OHMIC CONTACTS; SCHOTTKY BARRIER HEIGHTS;

OHMIC CONTACTS;

EID: 0030566257     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00506-5     Document Type: Article

References (6)

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2. E.H. Rhoderick and R.H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Oxford University Press, Oxford, 1988) p. 20.
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6. H.B. Michaelson, J. Appl. Phys. 48 (1977) 4729.