Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1282-1285

  Johnson, M A L ^a   Brown, J D ^a   El Masry, N A ^b   Cook Jr , J W ^a   Schetzina, J F ^a   Kong, H S ^c   Edmond, J A ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011452901     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590000     Document Type: Article

References (9)

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