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Volumn 37, Issue 5, 1990, Pages 1280-1288

Modes of Operation and Radiation Sensitivity of Ultrathin SOI Transistors

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

EID: 0025430219     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.108190     Document Type: Article
Times cited : (71)

References (14)
  • 1
    • 0022663346 scopus 로고
    • Reduction of floating substrate effect in thin-film SOI MOSFETs
    • J.-P. Colinge, “Reduction of floating substrate effect in thin-film SOI MOSFETs,” Electron. Lett., vol. 22, p. 187, 1986.
    • (1986) Electron. Lett. , vol.22 , pp. 187
    • Colinge, J.-P.1
  • 2
    • 0023961488 scopus 로고
    • Reduction of kink effect in thin-film SOI MOSFET’s
    • ——, “Reduction of kink effect in thin-film SOI MOSFET’s,” IEEE Electron Device Lett., vol. 9, p. 97, 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 97
  • 5
    • 0022753908 scopus 로고
    • Modeling of 0.l-µm MOSFET on SOI structure using Monte Carlo simulation technique
    • K. Throngnumchai, K. Asada, and T. Sugano, “Modeling of 0.l-µm MOSFET on SOI structure using Monte Carlo simulation technique,” IEEE Trans. Electron Devices, vol. ED-33, p. 1005, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1005
    • Throngnumchai, K.1    Asada, K.2    Sugano, T.3
  • 6
    • 0024612456 scopus 로고
    • Short-channel effect in fully depleted SOI MOSFET’s
    • K. K. Young, “Short-channel effect in fully depleted SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 36, p. 399, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 399
    • Young, K.K.1
  • 7
    • 0022700996 scopus 로고
    • Subthreshold slope of thin-film SOI MOSFET’s
    • J.-P. Colinge, “Subthreshold slope of thin-film SOI MOSFET’s,” IEEE Electron Device Lett., vol. EDL-7, p. 244, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 244
    • Colinge, J.-P.1
  • 8
    • 0024626928 scopus 로고
    • Analysis of conduction in fully depleted SOI MOSFET’s
    • K. K. Young, “Analysis of conduction in fully depleted SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 36, p. 504, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 504
    • Young, K.K.1
  • 9
    • 0342923767 scopus 로고
    • Performance advantages of submicron silicon-on-insulator devices for ULSI
    • J. C. Sturm, “Performance advantages of submicron silicon-on-insulator devices for ULSI,” in Proc. Mat. Res. Soc. Symp., vol. 107, p. 295, 1988.
    • (1988) Proc. Mat. Res. Soc. Symp. , vol.107 , pp. 295
    • Sturm, J.C.1
  • 11
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s
    • H.-K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, p. 1244, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244
    • Lim, H.-K.1    Fossum, J.G.2
  • 13
    • 0023648442 scopus 로고
    • CMOS circuits made in thin SIMOX films
    • J. P. Colinge and T. I. Kamins, “CMOS circuits made in thin SIMOX films,” Electron. Lett., vol. 23, p. 1162, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 1162
    • Colinge, J.P.1    Kamins, T.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.