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Volumn 37, Issue 6, 1990, Pages 2013-2019

CMOS/SOI hardening at 100 Mrad(SiO2)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTERS, MICROCOMPUTER; GAMMA RAYS; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY; SEMICONDUCTOR DEVICES--RADIATION HARDENING;

EID: 0025658655     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101223     Document Type: Article
Times cited : (51)

References (17)
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  • 3
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    • Tokamaks Fusion Generators for Nuclear Radiation Effects Testing
    • (Dec.)
    • D.L. Jassby, “Tokamaks Fusion Generators for Nuclear Radiation Effects Testing”, IEEE Trans. Nucl. Sci., Vol. 29, No. 6, 1519 (Dec. 1982).
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    • Jassby, D.L.1
  • 5
    • 0024170861 scopus 로고
    • Demonstration of the Benefits of SOI for High Temperature Operation
    • St Simons Island, (Oct.)
    • W.A. Krull and J.C. Lee, “Demonstration of the Benefits of SOI for High Temperature Operation”, 1988 IEEE SOS/SOI Technology Workshop, St Simons Island, (Oct. 1988), p. 69.
    • (1988) 1988 IEEE SOS/SOI Technology Workshop , pp. 69
    • Krull, W.A.1    Lee, J.C.2
  • 6
    • 0024173160 scopus 로고
    • From Substrate to VLSI: Investigation of Hardened SIMOX
    • (Dec.)
    • J.L. Leray, E. Dupont-Nivet, O. Musseau et al., “From Substrate to VLSI: Investigation of Hardened SIMOX”, IEEE Trans. Nucl. Sci., Vol. NS-35, No. 6, 1355 (Dec. 1988).
    • (1988) IEEE Trans. Nucl. Sci. , vol.NS-35 , Issue.6 , pp. 1355
    • Leray, J.L.1    Dupont-Nivet, E.2    Musseau, O.3
  • 9
    • 0017905148 scopus 로고
    • Island-Edge Effects in CMOS/SOS Transistors
    • (Aug.)
    • S.N. Lee, A. Kjar and G. Kinoshita, “Island-Edge Effects in CMOS/SOS Transistors”, IEEE Trans. on Electron Devices, Vol. ED-25, No. 8, 971 (Aug. 1978).
    • (1978) IEEE Trans. on Electron Devices , vol.ED-25 , Issue.8 , pp. 971
    • Lee, S.N.1    Kjar, A.2    Kinoshita, G.3
  • 10
    • 0020271819 scopus 로고
    • X-ray Wafer Probe for Total Dose Testing
    • (Dec.)
    • L.J. Palkuti and J. J. LePage, “X-ray Wafer Probe for Total Dose Testing”, IEEE Trans. Nucl. Sci., Vol. NS-29, No. 6, 1832 (Dec. 1982).
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29 , Issue.6 , pp. 1832
    • Palkuti, L.J.1    LePage, J.J.2
  • 12
    • 0022252585 scopus 로고
    • Activation Energies of Oxide Charge Recovery in SOS or SOI Structures After an Ionizing Pulse
    • (Dec.)
    • J.L. Leray, “Activation Energies of Oxide Charge Recovery in SOS or SOI Structures After an Ionizing Pulse”, IEEE Trans. Nucl. Sci, Vol. NS-32, No. 6, 3921 (Dec. 1985).
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , Issue.6 , pp. 3921
    • Leray, J.L.1
  • 13
    • 0025430219 scopus 로고
    • Modes of Operation of Ultrathin SOI Transistors
    • (May)
    • D.C. Mayer, “Modes of Operation of Ultrathin SOI Transistors”, IEEE Trans. Electron Dev., Vol. ED-37, No. 5, 1280 (May 1990).
    • (1990) IEEE Trans. Electron Dev. , vol.ED-37 , Issue.5 , pp. 1280
    • Mayer, D.C.1
  • 15
    • 0023538273 scopus 로고
    • Applied Field and Total Dose Dependence of Trapped Charge Build-up in MOS Devices
    • (Dec.)
    • R.J. Krantz, L.W. Aukerman and T.C. Zietlow, “Applied Field and Total Dose Dependence of Trapped Charge Build-up in MOS Devices”, IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, 1197 (Dec. 1987).
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , Issue.6 , pp. 1197
    • Krantz, R.J.1    Aukerman, L.W.2    Zietlow, T.C.3
  • 16
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    • Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose
    • (Dec.)
    • H.E. Boesch, F.B. McLean, J.M. Benedetto and J.M. McGarrity, “Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose”, IEEE Trans. Nucl. Sci., Vol. NS-33, No. 6, 1191 (Dec. 1986).
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , Issue.6 , pp. 1191
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  • 17
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    • Charge Distribution in MOS Capacitor for Large Irradiation Dose
    • (Dec.)
    • T.W. Coffins, F.E. Holmstrom and J.N. Churchill, “Charge Distribution in MOS Capacitor for Large Irradiation Dose”, IEEE Trans. Nucl. Sci., Vol. NS-26, No. 6, 5176 (Dec. 1979).
    • (1979) IEEE Trans. Nucl. Sci. , vol.NS-26 , Issue.6 , pp. 5176
    • Coffins, T.W.1    Holmstrom, F.E.2    Churchill, J.N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.