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1
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0024908421
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Model for CMOS/SOI Single-Event Vulnerability
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Dec.
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S.E. Kerns, L.W. Massengill, D.V. Kerns, Jr., M.L. Alles, T.W. Houston, H. Lu, and L.R. Hite, “Model for CMOS/SOI Single-Event Vulnerability”, IEEE Transactions on Nuclear Science, pp. 2305–2310, Dec 1989.
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(1989)
IEEE Transactions on Nuclear Science
, pp. 2305-2310
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Kerns, S.E.1
Massengill, L.W.2
Kerns, D.V.3
Alles, M.L.4
Houston, T.W.5
Lu, H.6
Hite, L.R.7
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2
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0038378622
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A Lumped Parameter Model for Simulation of Single-Event Event Radiation Effects on Small Geometry Silicon-on-Insulator Transistors
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Masters Thesis, Vanderbilt University
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M.L. Alles, “A Lumped Parameter Model for Simulation of Single-Event Event Radiation Effects on Small Geometry Silicon-on-Insulator Transistors”, Masters Thesis, Vanderbilt University, 1990.
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(1990)
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Alles, M.L.1
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3
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0025386531
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Single-Event Event Charge Enhancement in SOI Devices
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Feb.
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L.W. Massengill, D.V. Kerns, Jr., S.E. Kerns, and M.L. Alles, “Single-Event Event Charge Enhancement in SOI Devices”, IEEE Electron Device Letters, pp. 98–99, Feb 1990.
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(1990)
IEEE Electron Device Letters
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Massengill, L.W.1
Kerns, D.V.2
Kerns, S.E.3
Alles, M.L.4
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4
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84941860378
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Rad-Hard SOI/SRAM Design Using a Predictive SEU Device Model
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M. Alles, KL. Jones, J.E. Clark, J.C. Lee W.F Kraus, S.E. Kerns, and L.W. Massengill, “Rad-Hard SOI/SRAM Design Using a Predictive SEU Device Model”, Government Microcircuit Applications Conference Digest of Papers, pp. 443–445, 1990.
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(1990)
Government Microcircuit Applications Conference Digest of Papers
, pp. 443-445
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Alles, M.1
Jones, K.L.2
Clark, J.E.3
Lee, J.C.4
Kraus, W.F.5
Kerns, S.E.6
Massengill, L.W.7
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5
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0024946276
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Features of the Triggering Mechanism for Single-Event Burnout of Power MOSFET's
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Dec.
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J.H. Hohl and G.H Johnson, “Features of the Triggering Mechanism for Single-Event Burnout of Power MOSFET's”, IEEE Transactions on Nuclear Science, pp. 2260–2266, Dec 1989.
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(1989)
IEEE Transactions on Nuclear Science
, pp. 2260-2266
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Hohl, J.H.1
Johnson, G.H.2
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6
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84939039762
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Transient Radiation Effects in SOI Memories
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Dec.
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G.E. Davis, L.R. Hite, T.G. Blake, C.E. Chen, H.W. Lam and R. DeMoyer, Jr., “Transient Radiation Effects in SOI Memories”, IEEE Transactions on Nuclear Science, pp. 4432–4437, Dec 1985.
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(1985)
IEEE Transactions on Nuclear Science
, pp. 4432-4437
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Davis, G.E.1
Hite, L.R.2
Blake, T.G.3
Chen, C.E.4
Lam, H.W.5
DeMoyer, R.6
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7
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84939698534
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The Simulation of Pulsed-Ionizing-Radiation-Induced Errors in CMOS Memory Circuits
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Dissertation, North Carolina State University
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L.W. Massengill, “The Simulation of Pulsed-Ionizing-Radiation-Induced Errors in CMOS Memory Circuits”, Dissertation, North Carolina State University, 1987.
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(1987)
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Massengill, L.W.1
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8
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84941865676
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TRIGSPICE; Transient Radiation Inclusive and GaAs SPICE
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Technical Memo, North Carolina State University
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L.W Massengill, “TRIGSPICE; Transient Radiation Inclusive and GaAs SPICE”, Technical Memo, North Carolina State University, 1985.
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(1985)
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Massengill, L.W.1
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9
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8644235526
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On the Variation of Junction-Transistor Current Amplification Factor with Emitter Current
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W. M. Webster “On the Variation of Junction-Transistor Current Amplification Factor with Emitter Current”, Proceedings IRE, vol. 42, pp. 914, 1954.
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(1954)
Proceedings IRE
, vol.42
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Webster, W.M.1
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